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As electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room.
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Samsung announced that it has developed the first all-DRAM stacked memory package using 'through silicon via' (TSV) technology, which will soon result in memory packages that are faster, smaller and consume less power.
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Super Talent Technology today launched a series of IDE Flash Disk Modules (FDM's), which are on display this week in Super Talent's booth at the Embedded Systems Conference.
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Samsung, announced today that it has begun mass producing the industry's first 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)-class process technology.
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Samsung, announced that it has increased the data transfer speed of the world's fastest graphics memory GDDR4 (series four of graphics double-data-rate memory) by two-thirds.
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The Semiconductor Industry Association (SIA) released on Tuesday global figures for chip sales in November 2006.
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