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Introducing the industry's largest density SLC NAND chip at 16Gb and
enhanced SLC lineup
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New 34 Nanometer 32 Gigabit NAND Chip is Industry's Most Advanced NAND Process Technology Available Enabling Increased Storage Capacity in Small Form-Factor Applications
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Toshiba Corporation and SanDisk® today announced that they have signed a non-binding memorandum of understanding to form a new production joint venture and construct a new 300 millimeter (mm) wafer fab in Japan
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Based on advanced MLC NAND flash technology, iNAND embedded flash drives answer the booming demand for high-capacity, high-performance storage in multimedia and feature-rich handsets.
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SanDisk Announces Major Advancement in Flash Storage with New 3-bit-per-cell (x3) Nand Flash Memory Technology.
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Cutting-Edge Process Technology Co-Developed With Toshiba Demonstrates Continued Technology and Manufacturing Leadership in MLC Flash Memory.
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Intel Corporation and Micron Technology Inc. today unveiled a high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for storage.
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Intel Corporation and Micron Technology Inc. today unveiled a high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for storage.
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New High-Capacity Memory Cards Deliver the Ultimate in Functionality and Performance to Those Managing Images, Video, and Music
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Industry-Leading Hardware and Software Products Simplify MLC Flash Memory Subsystem Design.
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Addressing the performance, compatibility, functionality and reliability needs of solid state mass storage solutions, SST, today announced that it is expanding its NAND controller offerings.
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Production snags in the migration to more advanced NAND Flash manufacturing processes has led to a lower-than-expected output. At the same time, with the iPhone and iPod set to consume a significant amount of Flash chips, the market has grown wary that a shortage may occur. In the near term, prices are expected to continuing rising.
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Samsung announced that it has begun mass producing 1.8-inch solid state drives (SSD) at 64GB (gigabytes) - the highest density SSD available today for mobile computing applications.
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Toshiba Corporation today announced a new series of embedded NAND Flash memories for mobile phones offering both a configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area, allowing applications and data to be stored on the same chip.
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced the opening of the largest 300mm NAND flash memory wafer plant in Austin, Texas on Thursday, in ceremonies that included Texas Governor Rick Perry and Samsung Electronics Vice Chairman & CEO Jong-Yong Yun.
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Toshiba Corporation today announced a new three dimensional memory cell array structure that enhances cell density and data capacity without relying on advances in process technology, and with minimal increase in the chip die size.
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Reaching for the "sweet spot" of memory storage for laptop computers, SanDisk® Corporation (NASDAQ: SNDK) today expanded its line of solid state drive (SSD) products with the introduction of a 64-gigabyte (GB) SSD aimed at both enterprise users and early adopter consumers such as gamers.
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Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced that it has developed a four gigabyte (GB) MCP (multi-chip package) for mobile phones that for the first time forgoes the need for an external memory card slot and also eliminates having to develop interface software for all types of NAND memory.
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Samsung announced today that it has become the first to begin mass producing 16 gigabit (Gb) NAND flash, the highest capacity memory chip now available.
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Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer (nm) multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
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